Technology Development Intern, RF GaN (Summer 2026) jobs in United States
cer-icon
Apply on Employer Site
company-logo

GlobalFoundries · 3 months ago

Technology Development Intern, RF GaN (Summer 2026)

GlobalFoundries is a leading full-service semiconductor foundry providing design, development, and fabrication services. They are seeking motivated students for a Technology Development Intern role focused on semiconductor process and device development, particularly in RF GaN technologies.

ElectronicsManufacturingSemiconductor
check
H1B Sponsor Likelynote

Responsibilities

Innovate with device, test, and process integration team members in defining, designing, and setting up process modules and integration, associated in-line physical and electrical measurement structures and associated measurement and analysis tools to be used in the technology to meet project objectives for electrical performance, reliability, and yield. Focus on GaN HEMT development for RF applications
Collaborate with the various device, process integration, and program management teams in our technology development team to organize, run, and analyze experiments for the GaN technology as it is being developed to meet performance, reliability, yield, and cost objectives
Collaborate with various Fab9 engineering teams outside of the technology development team, such as testing, failure analysis, unit module process, reliability, manufacturing, modeling and TCAD simulation, to facilitate and achieve program success
Collaborate with various technical teams to ensure appropriate process module & integration, in-line process controls, and corresponding electrical tests are available for any new devices or concerns
Collaborate with teams on physical and electrical device simulation and final characterization analysis to meet best in class device performance. Including potential DC/AC and RF test and analysis of discrete electrical devices including GaN HEMTs, capacitor, Diode, and resistor devices
Support technology development qualification milestones from conception through manufacturing installation
Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs

Qualification

GaN HEMT characterizationSemiconductor device physicsSemiconductor processingElectrical characterizationWide bandgap materialsProject managementPlanningEnglish fluencyCommunication skillsOrganizational skills

Required

Education – Actively pursuing a Masters or Ph. D. in Electrical Engineering or Solid State Physics or related field through an accredited degree program during the time of internship
A basic knowledge of modern semiconductor device physics and device characterization, and of semiconductor processing with emphasis on wide band gap materials like the III-N material system
Experience with GaN HEMT device characterization (DC, s-parameter, loadpull, pulsed I-V) and fabrication
Must have at least an overall 3.0 GPA and be in good academic standing
Language Fluency - English (Written & Verbal)
Ability to work at least 40 hours per week during the internship

Preferred

Prior related internship or co-op experience
Demonstrated prior leadership experience in the workplace, school projects, competitions, etc
Project management skills, i.e., the ability to innovate and execute on solutions that matter; the ability to navigate ambiguity
Strong written and verbal communication skills
Strong planning & organizational skills
Educational experience in modern device physics (FET, BJT, and HEMT devices, bulk and SOI device structures). Including associated electrical test and analysis methods of discrete device structures
Research experience in GaN e-mode or d-mode HEMT RF High Frequency or Power High Voltage devices, or Wide Bandgap Device (WBG) devices
Fundamental understanding of WBG device physics like dispersion, traps, self-heating, buffer design, and analysis techniques
Experience in semiconductor processing in GaN, CMOS, SiGe technologies for RF
Experience in fabrication and electrical characterization of GaN HEMT devices

Company

GlobalFoundries

company-logo
GlobalFoundries is a full-service semiconductor foundry that manufactures integrated circuits in high volume.

H1B Sponsorship

GlobalFoundries has a track record of offering H1B sponsorships. Please note that this does not guarantee sponsorship for this specific role. Below presents additional info for your reference. (Data Powered by US Department of Labor)
Distribution of Different Job Fields Receiving Sponsorship
Represents job field similar to this job
Trends of Total Sponsorships
2025 (114)
2024 (76)
2023 (66)
2022 (100)
2021 (87)
2020 (187)

Funding

Current Stage
Public Company
Total Funding
$4.39B
Key Investors
European CommissionU.S. Department of CommerceU.S. Department of Defense
2025-12-11Grant· $579.33M
2024-11-20Grant· $1.5B
2024-05-22Post Ipo Secondary· $750M

Leadership Team

D
DK Sohn
VP
linkedin
leader-logo
Jonathan Park
IP Strategy and Offering Management
linkedin
Company data provided by crunchbase