GlobalFoundries · 2 weeks ago
Device Engineering Intern, SiGe BiCMOS Development (Summer 2026)
GlobalFoundries is a leading full-service semiconductor foundry providing design, development, and fabrication services. The Device Engineering Intern will work with the RF Technology Development team to analyze and develop new devices and process flows for SiGe BiCMOS technologies.
ElectronicsManufacturingSemiconductor
Responsibilities
Innovate with device, test, and process integration team members in defining, designing, and setting up electrical test structures, associated wafer measurements, and analysis tools to be used in the technology to meet project objectives for electrical performance, reliability, and yield
Collaborate with the various device, process integration, and program management teams in our technology development team to simulate and/or characterize the technology as it is being developed to meet performance, reliability, yield, and cost objectives
Collaborate with various Fab9 engineering teams outside of the technology development team, such as testing, failure analysis, unit module process, reliability, manufacturing, modeling and TCAD simulation, to facilitate and achieve program success
Support technology development qualification milestones from conception through manufacturing installation. Collaborate with various technical teams to ensure appropriate electrical tests are available for any new devices or concerns. Perform electrical device simulation and characterization, and drive analysis and team to meet best in class device performance. Includes DC/AC and RF test and analysis of discrete electrical devices like HBTs, CMOS, resistors, caps etc
Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs
Qualification
Required
Education – Actively pursuing a Ph. D. in Electrical Engineering, Solid State Physics, Microelectronics, or related field through an accredited degree program during the time of internship
A basic knowledge of modern semiconductor device physics and device characterization, and of semiconductor processing with emphasis on Bipolar transistors
Experience with device characterization – DC I-V, C-V measurements, RF s-parameters
Must have at least an overall 3.0 GPA and be in good academic standing
Language Fluency - English (Written & Verbal)
Ability to work at least 40 hours per week on site (Fab9, Essex Junction, VT) during the internship
Preferred
Prior related internship or co-op experience
Demonstrated prior leadership experience in the workplace, school projects, competitions, etc
Project management skills, i.e., the ability to innovate and execute on solutions that matter; the ability to navigate ambiguity
Educational experience in device physics (FET, BJT, and HEMT devices, bulk and SOI device structures). Including associated electrical test and analysis methods of discrete device structures
Research experience in SiGe or InP HBT design or characterization
RF characterization experience – s-parameters, loadpull and noise figure
Simulation and design layout experience using Cadence or related software
Experience with data analysis tools and scripts like JMP, R, Python etc
Experience in semiconductor processing in CMOS or SiGe technologies for RF
Strong written and verbal communication skills
Strong planning & organizational skills
Company
GlobalFoundries
GlobalFoundries is a full-service semiconductor foundry that manufactures integrated circuits in high volume.
H1B Sponsorship
GlobalFoundries has a track record of offering H1B sponsorships. Please note that this does not
guarantee sponsorship for this specific role. Below presents additional info for your
reference. (Data Powered by US Department of Labor)
Distribution of Different Job Fields Receiving Sponsorship
Represents job field similar to this job
Trends of Total Sponsorships
2025 (114)
2024 (76)
2023 (66)
2022 (100)
2021 (87)
2020 (187)
Funding
Current Stage
Public CompanyTotal Funding
$4.39BKey Investors
European CommissionU.S. Department of CommerceU.S. Department of Defense
2025-12-11Grant· $579.33M
2024-11-20Grant· $1.5B
2024-05-22Post Ipo Secondary· $750M
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