Qorvo, Inc. · 7 hours ago
Sr Principal GaN Modeling Engineer
Richardson, TX
Full-time
Onsite
Senior Level, Lead/Staff
$191K/yr - $249K/yr
15+ years expQorvo, Inc. supplies innovative semiconductor solutions and is seeking a highly skilled RF GaN Transistor Modeling Engineer to join their Modeling Team. The role involves analysis and development of accurate models for GaN HEMTs, collaborating with engineers and designers to ensure high performance in wireless communication systems.
Network HardwareSemiconductorWireless
Hiring Manager
Scott Mitchell
Responsibilities
Device Characterization: Define on-wafer and packaged device characterization plans, including DC, capacitance-voltage (CV), small-signal RF (S-parameters), noise, and large-signal measurements (e.g., load-pull, pulsed I-V)
Model Development & Extraction: Develop and refine accurate, physics-based compact models for GaN HEMTs using industry-standard modeling tools and techniques (e.g., MVSG, ASM-HEMT, Angelov)
Simulation & Validation: Utilize TCAD and circuit simulation tools (e.g., Keysight ADS, Cadence AWR/Spectre, Synopsys, Silvaco) to perform simulations, analyze data, and validate model accuracy against hardware measurements
PDK Development: Collaborate with the PDK Team and provide support for both internal and external customers
Cross-Functional Collaboration: Work closely with process engineers to link device performance to fabrication parameters, with reliability engineers to understand long-term device stability, and with circuit designers to ensure models meet their design requirements
Analysis & Troubleshooting: Conduct in-depth analysis of test data, identify device or measurement issues, and propose solutions for performance and yield improvement
Documentation & Reporting: Prepare detailed technical reports, documentation, and application notes for model usage and limitations
Innovation & Mentorship: Research and develop novel modeling solutions and characterization techniques, and mentor junior engineers or team members
Qualification
Required
Education: Master's or Ph.D. in Electrical Engineering, Applied Physics, or a related field with a focus on semiconductor devices
Experience: 15+ years of experience in semiconductor device characterization and modeling, specifically with RF GaN HEMT technologies
Deep theoretical and practical understanding of GaN device physics and materials science
Proficiency with RF characterization equipment (network analyzers, spectrum analyzers, load-pull systems, probe stations)
Expertise in industry-standard RF simulation and modeling tools (Keysight ADS, Cadence AWR, TCAD tools, etc.)
Strong programming and data analysis skills (e.g., Python, MATLAB, C++) for automation and data interpretation
Company
Qorvo, Inc.
Qorvo (Nasdaq: QRVO) supplies innovative semiconductor solutions that make a better world possible.
5001-10000 employees
H1B Sponsorship
Qorvo, Inc. has a track record of offering H1B sponsorships. Please note that this does not
guarantee sponsorship for this specific role. Below presents additional info for your
reference. (Data Powered by US Department of Labor)
Distribution of Different Job Fields Receiving Sponsorship
Represents job field similar to this job
Trends of Total Sponsorships
2025 (81)
2024 (113)
2023 (45)
2022 (94)
2021 (100)
2020 (55)
Funding
Current Stage
Public CompanyTotal Funding
$350MKey Investors
Starboard Value
2025-10-28Acquired
2025-01-16Post Ipo Equity
2019-09-30Post Ipo Debt· $350M
Leadership Team
Robert Bruggeworth
CEO
Debra Howard
Senior Vice President and Chief Human Resources Officer
Recent News
eeNews Europe
2025-12-30
2025-11-28
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