Renesas Electronics · 4 weeks ago
Senior Staff MOCVD Development Engineer
Goleta, CALIFORNIA
Full-time, Contract
Hybrid
Senior Level, Lead/Staff
$180K/yr - $220K/yr
8+ years expRenesas Electronics is an embedded semiconductor solution provider dedicated to making lives easier. The Senior Staff MOCVD Development Engineer will lead process and hardware development for GaN-based epitaxial growth, focusing on translating research concepts into production-capable processes and ensuring high-performance device layers.
ElectronicsManufacturingRetailSemiconductor
Responsibilities
Develop, optimize, and transfer MOCVD epitaxial processes for GaN-on-Si and GaN-onSapphire wafers, focusing on high-performance device layers targeting e-mode (p-GaN gate) and HEMT applications
Design and execute development roadmaps for buffer structure engineering, strain management, and defect reduction to achieve target breakdown voltages, leakage, and mobility metrics
Lead process integration studies addressing p-type activation, Mg incorporation, compensation control, and interface optimization for gate reliability
Drive reactor-scale modeling and hardware tuning to improve growth uniformity, thickness control, and wafer bow mitigation on large-diameter substrates
Analyze defect physics mechanisms (threading dislocations, V-defects, point defects) affecting device reliability and performance, driving iterative improvements in process conditions
Design and execute structured experiments (DOE-based) to deconvolve multi-parameter interactions in reactor conditions, precursor chemistry, and thermal profiles
Characterize epitaxial films using XRD, AFM, TEM, PL, CV, and Hall measurements, correlating data to growth parameters and device performance
Collaborate closely with device engineers and reliability teams to co-optimize epitaxial structures for threshold voltage, dynamic Ron, off-state leakage, and long-term stability
Translate device performance specifications and reliability requirements into detailed epitaxial process and material specifications; document Process of Record (PoR) and engineering specifications for qualification and manufacturing handoff
Support failure analysis, root cause investigations, and corrective action implementation for process-related device excursions or reliability issues
Lead process transfer activities from R&D to pilot or production-scale reactors, ensuring knowledge capture and robust parameter windows
Qualification
Required
Ph.D. in Materials Science, Electrical Engineering, Physics, or closely related discipline. M.S. with 10+ years of directly relevant hands-on experience
Minimum 8+ years of direct hands-on MOCVD process development and optimization for III-V or III-nitride semiconductor materials (GaN, AlGaN, InGaN, etc.)
Demonstrated technical expertise in GaN-on-Si and/or GaN-on-Sapphire heterostructures, including buffer layer design, strain engineering, and defect reduction strategies
Strong experience developing p-type GaN epitaxy and e-mode device architectures, with deep understanding of Mg activation, dopant diffusion control, and gate stack engineering for threshold voltage stability
Proficiency with advanced epitaxial layer characterization techniques (XRD, SIMS, CL, TEM, PL, Hall effect measurements) and ability to interpret results to guide process optimization
Track record of designing complex DOEs, executing structured experiments, conducting statistical analysis (SPC, multivariate data interpretation), and drawing evidence-based conclusions
Demonstrated success in transferring epitaxial processes from R&D to pilot or high-volume manufacturing environments, with understanding of manufacturability constraints and yield optimization
Excellent written and verbal communication skills
Preferred
Experience with multiple MOCVD platforms (e.g., Aixtron G5, G4, or Veeco Propel systems)
Familiarity with GaN power device design requirements and performance metrics
Prior leadership or mentoring experience in an R&D or manufacturing engineering environment
Benefits
Medical
Health savings account (with applicable medical plan)
Dental
Vision
Health and/or dependent care flexible spending accounts
Pre-tax commuter benefits
Life insurance
AD&D
Pet insurance
Company-paid life insurance and AD&D
LTD
Short term medical benefits
Paid sick time
Paid holidays
Accrued paid vacation
Company
Renesas Electronics
Renesas is an embedded semiconductor solution provider driven by its Purpose ‘To Make Our Lives Easier.’ As the industry’s leading expert in embedded processing with unmatched quality and system-level know-how, we have evolved to provide scalable and comprehensive semiconductor solutions for automotive, industrial, infrastructure, and IoT industries based on the broadest product portfolio, including High Performance Computing, Embedded Processing, Analog & Connectivity, and Power.
10001+ employees
H1B Sponsorship
Renesas Electronics has a track record of offering H1B sponsorships. Please note that this does not
guarantee sponsorship for this specific role. Below presents additional info for your
reference. (Data Powered by US Department of Labor)
Distribution of Different Job Fields Receiving Sponsorship
Represents job field similar to this job
Trends of Total Sponsorships
2025 (76)
2024 (68)
2023 (53)
2022 (59)
2021 (71)
2020 (53)
Funding
Current Stage
Public CompanyTotal Funding
unknown2022-06-22Series Unknown
2003-07-24IPO
Leadership Team
Balaji Kanigicherla
CTO & Head of Engineering
Gaurang Shah
Vice President/General Manager, Power Management Group
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