University of Bristol - School of Physiology, Pharmacology and Neuroscience · 1 week ago
Postdoctoral Research Associate in Ultra-High Power Wide Bandgap Semiconductor RF Devices: Innovation in Thermal Management and Design
Bristol, CT
Full-time
Onsite
New Grad, Entry Level
£40K/yr - £45K/yrThe University of Bristol is seeking a Postdoctoral Research Associate in Ultra-High Power Wide Bandgap Semiconductor RF Devices at the Centre for Device Thermography and Reliability. This role involves advancing thermal management and reliability of novel electronic semiconductor devices, focusing on wide and ultra-wide bandgap materials, and utilizing optical laser-based systems for temperature and electric field studies.
Higher Education
Responsibilities
Conduct research to advance ultra-wide bandgap semiconductor device technology and understanding
Design, build and use optical laser-based systems for device temperature and material thermal characterization
Develop material/device thermal models for device design using finite element and other simulation tools
Contribute to managing our thermal characterization laboratory and support short-term industrial contract
Qualification
Required
Postgraduate (PhD) experience in Physics, Materials Science or Engineering, or be working towards one, or equivalent professional qualification/experience
Extensive expertise is required in semiconductor materials / devices, thermal characterization of materials or devices and in optical measurement techniques
A willingness to work together with, and co-supervise, PhD students is necessary
Preferred
Ideally with a good publication record
Company
University of Bristol - School of Physiology, Pharmacology and Neuroscience
Research within the School of Physiology, Pharmacology and Neuroscience is conducted across Neuroscience, Cardiovascular and Cell Signalling.
Founded in 1876
51-200 employees
Funding
Current Stage
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