Vertical Semiconductor · 3 weeks ago
Principal Semiconductor Device Engineer
Somerville
Full-time
Onsite
Lead/Staff
15+ years expVertical Semiconductor is a venture-backed MIT spin-out focused on developing vertical gallium nitride (GaN) power electronics for next generation compute and AI. They are seeking a Principal Semiconductor Device Engineer to lead the development and commercialization of GaN power device technology, providing technical leadership across various aspects of device architecture and process development.
Power GridSemiconductor
Responsibilities
Serve as a technical subject-matter expert for vertical GaN and wide-bandgap power devices across the full R&D lifecycle, from concept through early production readiness
Lead the definition and evolution of device architectures, performance targets, and design trade-offs for next-generation vertical GaN power devices
Drive device modeling, simulation, and analytical understanding to guide design optimization, scaling strategies, and reliability improvements
Plan and execute device development programs in shared fabs and external foundries, including technology transfer and process co-development
Partner closely with internal and external teams on CMOS-compatible GaN process integration, yield learning, and manufacturability
Provide technical leadership in failure analysis, reliability physics, and root-cause investigations for wide-bandgap power devices
Oversee and interpret on-wafer and discrete device characterization, including DC, CV, dynamic, and high-power testing
Develop and review GDS layouts, test structures, and evaluation vehicles to support device learning and validation
Support system-level understanding through application evaluation boards, measurements, and correlation to device behavior
Mentor junior engineers and influence technical best practices through informal technical leadership, design reviews, and knowledge sharing
Contribute to IP development, publications, and external technical engagements as appropriate
Qualification
Required
PhD or equivalent industry experience in Electrical Engineering, Physics, Materials Science, or Device Engineering
Approximately 15–25 years of professional R&D experience in semiconductor device development
Deep expertise in GaN or other wide-bandgap semiconductors (e.g., SiC), with a strong preference for power device experience
Demonstrated track record of technical impact and innovation in advanced device development programs
Extensive experience with power device design in GaN and/or SiC, including vertical device concepts
In-depth understanding of semiconductor manufacturing processes, integration challenges, and yield considerations
Proven experience working in shared fab and foundry environments, including external technology transfers
Strong proficiency in TCAD simulation for device physics, scaling, and optimization
Advanced data analysis skills using Python, MATLAB, or equivalent tools
Hands-on experience with GDS layout and test structure design
Expertise in wide-bandgap power device failure analysis and reliability physics
Experience with on-wafer automated DC/CV/dynamic testing and discrete component characterization
Ability to perform analytical calculations, simulations, design, build, and measure application evaluation boards as needed
Excellent communication skills with the ability to collaborate effectively across disciplines and with external partners
Benefits
Competitive salary
Comprehensive benefits package
Participation in our stock option program
Company
Vertical Semiconductor
Vertical Semiconductor is reinventing power conversion for the current computing infrastructure.
2-10 employees
Funding
Current Stage
Early StageTotal Funding
$11MKey Investors
Playground Global
2025-10-15Seed· $11M
Leadership Team
Cynthia Liao
CEO & Co-Founder
Joshua Peozek
CTO & Co-Founder
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