SiC Power Device Research Scientist - Design jobs in United States
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Wolfspeed · 6 hours ago

SiC Power Device Research Scientist - Design

positionDurham, NC
timeFull-time
remoteOnsite
senioritySenior Level
date5+ years exp

Wolfspeed is a company focused on innovation and diversity in the workplace. They are seeking a SiC Power Device Research Scientist to lead device development projects for next-generation silicon carbide power devices, emphasizing device design and collaboration with various teams throughout the product life cycle.

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Responsibilities

Lead device development efforts in high performance SiC power switching devices
Participate in device concept development activities in various SiC device structures, including SiC power MOSFETs, JFETs, BJTs, IGBTs, PiN diodes, JBS diodes, and GTO thyristors
Explore new device concepts for future generation of SiC power devices
Perform Design of Experiment (DoE) activities for performance optimization of commercial SiC power devices
Provide optimum device designs with considerations to manufacturability and reliability
Hands on characterization experimental devices
Data analysis of experimental data
Interact with teams in power electronics applications, fab process development, reliability, and modeling, and deliver device designs with optimal characteristics for target applications
Prepare technical presentations and papers for internal meetings, as well as conferences and journals

Qualification

Ph.D. in Electrical EngineeringPower device developmentSemiconductor device physicsHands-on characterizationCommercial TCAD toolsCAD layout toolsSemiconductor fabrication processesDevice characterization methodsDesign of experimentsAnalytical skillsProblem-solving skillsCommunication skillsTeamwork

Required

Ph.D. in Electrical Engineering, Solid State Physics, or closely related area
Strong understanding in semiconductor device physics
Experience in hands-on characterization of power semiconductor devices
Working knowledge of commercial TCAD tools
Working knowledge of CAD layout tools
Understanding of semiconductor fabrication processes and process integration
Understanding of semiconductor device characterization methods
Design of experiments and data interpretation skills
Ability to work in a team setting
Excellent analytical and problem-solving skills
Excellent communications/presentations skills
Must be authorized to work in the USA

Preferred

5 – 10 years of industrial experience in power device development
Experience in low voltage (~ 100V) discrete silicon power MOSFET development

Benefits

Childcare assistance
Paid parental leave
Continuing education assistance

Company

Wolfspeed

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Wolfspeed provider of the most field-tested SiC and GaN Power and RF solutions in the world.
dateFounded in 1987
location
Durham, North Carolina, USA
people-size1001-5000 employees
web-link
http://www.wolfspeed.com/

Funding

Current Stage
Public Company
Total Funding
$5.01B
Key Investors
ApolloU.S. Department of CommerceNorthern Star Partners
2025-01-15Post Ipo Equity· $200M
2024-10-15Post Ipo Debt· $750M
2024-10-15Grant· $750M

Leadership Team

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Elif Balkas
Chief Technology Officer
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Joanne Latham
Vice President, Culture & Community
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Recent News

thefly.com
Mixed options sentiment in Wolfspeed with shares up 1.93%
2026-01-16
Business Wire
Wolfspeed Achieves 300mm Silicon Carbide (SiC) Technology Breakthrough
2026-01-15
thefly.com
Wolfspeed produces single crystal 300mm silicon carbide wafer
2026-01-14
Company data provided by crunchbase